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| AOD607 Complementary Enhancement Mode Field Effect Transistor General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a Green Product ordering option. AOD607 and AOD607L are electrically identical. TO-252-4L D-PAK D1/D2 Features n-channel p-channel -30V VDS (V) = 30V ID = 12A (V GS=10V) -12A (V GS = -10V) RDS(ON) RDS(ON) < 25 m (VGS=10V) < 37 m (VGS = -10V) < 62 m (VGS = -4.5V) < 34 m (VGS=4.5V) D1/D2 Top View Drain Connected to Tab G1 S1 G2 S2 n-channel S1 G1 S2 G2 p-channel Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Max p-channel -30 20 -12 -12 -40 -18 40 25 12.5 2.1 1.3 -55 to 175 Typ 19 47 4.5 19 47 4.5 Max 23 60 6 23 60 6 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TC=25C 12 12 40 18 40 25 12.5 2.1 1.3 -55 to 175 Symbol RJA RJC RJA RJC Device n-ch n-ch n-ch p-ch p-ch p-ch Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD607 N-Channel Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=12A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=12A TJ=125C 1 40 20 28 27.5 25 0.75 1 18 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.8 VGS=10V, V DS=15V, ID=12A 9.8 2.5 3.5 4.5 VGS=10V, V DS=15V, R L=1.25, RGEN=3 IF=12A, dI/dt=100A/s IF=12A, dI/dt=100A/s 3.9 17.4 3.2 19 8 25 1.5 25 12.5 1250 25 34 34 1.7 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 0: March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD607 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 35 VGS=4.5V 30 RDS(ON) (m) 25 20 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V Normalized On-Resistance 1.4 VGS=4.5V 1.2 ID=5A 1.6 VGS=10V ID=12A 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 25C 16 20 VDS=5V 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 40 RDS(ON) (m) ID=12A IS (A) 30 125C 20 25C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 Alpha & Omega Semiconductor, Ltd. AOD607 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 VDS=15V ID=12A Capacitance (pF) 1500 1250 Ciss 1000 750 500 250 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 5 10 15 20 25 30 4 2 0 Coss VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10.0 ID (Amps) 50 1ms 10ms 0.1s 1s 10s 100s Power (W) 40 T J(Max)=150C T A=25C 30 1.0 T J(Max)=150C T A=25C 0.1 0.1 1 10s DC 20 10 10 VDS (Volts) 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=60C/W PD T on T 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOD607 P-Channel Electrical Characteristics (T=25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-12A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.2 -40 30 42 50 17 -0.76 -1 -18 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.7 VGS=-10V, VDS=-15V, ID=-12A 9.7 2.54 5.4 9 VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 IF=-12A, dI/dt=100A/s 25 20 12 21.4 13 13 35 30 18 26 16 5 23 11.7 1100 37 50 62 -2 Min -30 -0.003 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev0 : March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD607 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 70 VGS=-4.5V 60 RDS(ON) (m) 50 40 30 20 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 70 RDS(ON) (m) 125C 50 40 30 20 10 1.0E-06 0 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-04 25C 1.0E-05 25C -IS (A) 60 ID=-12A 1.0E-01 125C 1.0E-02 1.0E-03 1.0E+01 1.0E+00 VGS=-10V 1.60 VGS=-4.5V 1.40 ID=-5A 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -6V -5V -4.5V 25 20 -ID(A) 15 10 5 125C 25C VDS=-5V 30 -4V 1.20 VGS=-10V ID=-12A 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. AOD607 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-12A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Crss 8 -VGS (Volts) 6 4 2 0 100.0 TJ(Max)=150C, TA=25C 10s 40 TJ(Max)=150C TA=25C 30 100s Power (W) 100 20 -ID (Amps) 10.0 RDS(ON) limited 1ms 10ms 0.1s 1.0 1s 10s DC 10 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK =TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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